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TPD1032F
Preliminary
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1032F
2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drivers
TPD1032F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC offers intelligent self-protection functions.
Features
* Built-in two power IC chips with a new structure combining a control block and a vertical power MOSFET (L2--MOS) on each chip. Can directly drive a power load from a CMOS or TTL logic. Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter). Low Drain-Source ON-resistance: RDS (ON) = 0.4 (max) (@VIN = 5 V, ID = 1 A, Tch = 25C) Low Leakage Current: IDSS = 10 A (max) (@VIN = 0 V, VDS = 30 V, Tch = 25C) Low Input Current: IIN = 300 A (max) (@VIN = 5 V, Tch = 25C) 8-pin SOP package for surface with embossed-tape packing. Weight: 0.08 g (typ.)
* * * * * *
Pin Assignment (top view)
SOURCE1 1
8 DRAIN1
IN1 2
7 DRAIN1
SOURCE2 3
6 DRAIN2
IN2 4
5 DRAIN2
Note1: That because of its MOS structure, this product is sensitive to static electricity.
980910EBA1
* TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
2000-03-07
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TPD1032F
Preliminary
Block Diagram
SOURCE1 1 Overtemperature Detection /Protection IN1 2 Overcurrent Detection /Protection
8 DRAIN1
7 DRAIN1
SOURCE2 3 Overtemperature Detection /Protection IN2 4 Overcurrent Detection /Protection
6 DRAIN2
5 DRAIN2
Pin Description
Pin No. 1 Symbol SOURCE1 Source pin 1 Input pin 1 2 IN1 This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. Source pin 2 Input pin 2 4 IN2 This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. Drain pin 2 Drain current is limited (by current limiter) if it exceeds 3 A (min) in order to protect the IC. 7, 8 DRAIN1 Drain pin 1 Drain current is limited (by current limiter) if it exceeds 3 A (min) in order to protect the IC. Pin Description
3
SOURCE2
5, 6
DRAIN2
2000-03-07
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TPD1032F
Preliminary
Timing Chart
Input Signal
Overcurrent Protection
Overtemperature Protection
Output Current Current limiting (limiter) Overtemperature protection (Note2)
Note2: The overheating detector circuits feature hysteresis. After overheating is detected, normal operation is restored only when the channel temperature falls by the hysteresis amount (5C typ.) in relation to the overheating detection temperature.
Truth Table
IN L H L H L H VOUT H L H H H H Overtemperature Overcurrent Mode Normal
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain current Input voltage Power dissipation (t = 10 s) Operating temperature Channel temperature Storage temperature Symbol VDS (DC) ID VIN PD Topr Tch Tstg Rating 20 Internally Limited -0.3 to 7 2.0 (Note3) -40 to 110 150 -55 to 150 2 Unit V A V W C C C
Note3: Drive operation: Mount on glass epoxy boad [1 inch x 0.8 t] (in the two devices driving)
2000-03-07
3/5
TPD1032F
Preliminary
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note3) Symbol Rth (ch-a) Max 62.5 Unit C/W 2
Note3: Drive operation: Mount on glass epoxy boad [1 inch x 0.8 t] (in the two devices driving)
Electrical Characteristics (Tch = 25C)
Characteristics Drain-source clamp voltage Input threshold voltage Protective circuit operation input voltage range Draint cut-off current Symbol V (CL) DSS Vth VIN (opr) IDSS IIN (1) Input current IIN (2) Drain-source on resistance Overtemperature protection Overcurrent protection Switching time Source-drain diode forward voltage RDS (ON) TS IS tON tOFF VDSF Test Circuit 1 1 Test Condition VIN = 0 V, ID = 1 mA VDS = 13 V, ID = 10 mA VIN = 0 V, VDS = 30 V VIN = 5 V, at normal operation VIN = 5 V, when protective circuit is actuated VIN = 5 V, ID = 1 A VIN = 5 V VIN = 5 V VDD = 13 V, VIN = 5 V, ID = 1 A IF = 3 A, VIN = 0 V Min 40 1.0 3 150 3 Typ. 0.25 160 Max 60 2.8 7 10 300 390 0.4 30 60 1.7 A C A s V Unit V V V A
Test Circuit 1
Switching time measuring circuit
Test Circuit
Measured Waveforms
5V
TPD1032F IN OUT GND To be set so that ID = 1 A. 13 V
VIN Waveform 10%
90%
90% VOUT Waveform tON 10% tOFF
13 V
P.G
V
2000-03-07
4/5
TPD1032F
Preliminary
Package Dimensions
Weight: 0.08 g (typ.)
2000-03-07
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